On July 1, 2025, Renesas Electronics Corporation announced three new 650V GaN FETs, the TP65H030G4PRS, TP65H030G4PWS, and TP65H030G4PQS, designed for AI data centers, server power supplies, 800V HVDC systems, e-mobility charging, UPS battery backup, battery energy storage, and solar inverters. These 4th-generation plus (Gen IV Plus) devices, available in TOLT, TO-247, and TOLL packages, utilize the SuperGaN platform from Transphorm, acquired by Renesas in June 2024. The devices target multi-kilowatt applications, offering silicon-compatible gate drive inputs and reduced switching power loss compared to silicon, silicon carbide, and other GaN solutions.
The Gen IV Plus FETs feature a 14% smaller die than the previous Gen IV platform, with a 30 milliohm RDS(on), reducing on-resistance by 14% and improving the on-resistance output-capacitance-product figure of merit by 20%. The smaller die lowers system costs and output capacitance, enhancing efficiency and power density for thermally demanding applications. The devices support power systems from 1kW to 10kW, with paralleling for higher power, and offer thermal management flexibility through TOLT and TOLL packages with bottom- and top-side conduction paths, alongside the TO-247 package for higher thermal capacity. The depletion mode (d-mode) normally-off design integrates a low-voltage silicon MOSFET, enabling compatibility with standard gate drivers, unlike enhancement mode GaN devices. This configuration supports a 4V threshold voltage and reduces gate charge, output capacitance, crossover loss, and dynamic resistance impact. The devices are compatible with existing designs, facilitating upgrades. Renesas has shipped over 20 million GaN devices, representing 300 billion hours of field usage, and offers a broad portfolio for both high- and low-power applications. The new FETs, along with a 4.2kW Totem-pole PFC GaN Evaluation Platform (RTDTTP4200W066A-KIT), are available now. More details can be found at renesas.com/gan-fets.
